Description

Blagodarya postoyannomu sovershenstvovaniyu iskhodnykh materialov i tekhnologicheskikh protsessov kharakteristiki poluprovodnikovykh priborov i mikroskhem dostigayut vse bolee vysokikh urovney. Shirokoe ispol'zovanie poluprovodnikovykh geterostruktur dlya sozdaniya priborov tverdotel'noy SVCh elektroniki yavlyaetsya kharakternoy osobennost'yu sovremennogo etapa razvitiya tekhnologicheskikh bazisov SVCh priborov i integral'nykh skhem. Odnim iz naibolee perspektivnykh napravleniy razrabotki SVCh geterostrukturnykh elementov yavlyaetsya primenenie nitridov galliya pri sozdanii polevykh tranzistorov s vysokoy podvizhnost'yu elektronov v kanale na osnove geterostruktury AlGaN/GaN. Sleduet otmetit', chto germaniy, nakhodivshiysya dostatochno dolgoe vremya za bortom mikroelektroniki, v nastoyashchee vremya v sostave geterostruktury SiGe yavlyaetsya perspektivnym materialom dlya sozdaniya SVCh priborov. Tsel'yu dannoy raboty yavlyaetsya obobshchenie rezul'tatov, poluchennykh pri issledovanii vliyaniya ioniziruyushchikh izlucheniy na kharakteristiki sovremennykh i perspektivnykh izdeliy tverdotel'noy SVCh elektroniki na osnove poluprovodnikovykh geterostruktur AlGaN/GaN i SiGe.
  • ISBN13: 9783659981111
  • Publisher: Palmarium Academic Publishing
  • Pubilcation Year: 2012
  • Format: Paperback
  • Pages: 00096
Specifications
LanguageRussian
FormatPaperback
Publication DateDecember 3, 2012
Pages96

Vliyanie Radiatsii

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